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HT48E70 Datasheet(PDF) 21 Page - Holtek Semiconductor Inc |
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HT48E70 Datasheet(HTML) 21 Page - Holtek Semiconductor Inc |
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21 / 44 page ![]() HT48E70 Rev. 1.00 21 September 16, 2005 ERAL The ERAL instruction erases the entire 256 ´8 memory cells to a logical ²1² state in the programming enable mode. After the erase-all instruction set has been is- sued, the data erase feature is activated by a falling edge of CS. Since the internal auto-timing generator provides all timing signal for the erase-all operation, so the SK clock is not required. During the internal erase-all operation, we can verify the busy/ready status if CS is high. The DO will remain low but when the operation is over, the DO will return to high and further instruction can be executed. WRAL The WRAL instruction writes data into the entire 256 ´8 memory cells in the programming enable mode. After the write-all instruction set has been issued, the data writing is activated by a falling edge of CS. Since the in- ternal auto-timing generator provides all timing signals for the write-all operation, so the SK clock is not re- quired. During the internal write-all operation, we can verify the busy/ready status if CS is high. The DO will re- main low but when the operation is over the DO will re- turn to high and further instruction can be executed. EECR Control Timing Diagrams · READ · EWEN/EWDS · WRITE C S S K D O 0 D I S t a r t b i t 1 ( 1 ) t C D S * * A d d r e s s p o i n t e r a u t o m a t i c a l l y c y c l e s t o t h e n e x t w o r d 0 A N A 0 D 0 D X D X M o d e A N D X ( X 8 ) A 7 D 7 1 1 C S S K S t a n d b y D I 0 ( 1 ) 0 S t a r t b i t 1 1 = E W E N 0 0 = E W D S C S S K D O S t a n d b y D I 1 ( 1 ) t S V t P R t C D S V e r i f y 0 B u s y R e a d y S t a r t b i t A N A N - 1 A N - 2 A 1 D 0 A 0 D X 1 |
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