SIRC10DP datasheet(4/9 Pages) VISHAY

4 / 9 page

SiRC10DP

www.vishay.com

Vishay Siliconix

S21-0840-Rev. B, 09-Aug-2021

Document Number: 75189

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Gate Current vs. Gate-to-Source Voltage

Threshold Voltage

Single Pulse Power, Junction-to-Ambient

Safe Operating Area, Junction-to-Ambient

100

1000

10000

0.001

0.01

0.1

100

0.2

0.4

0.6

0.8

1.0

Axis Title

SD - Source-to-Drain Voltage (V)

2nd line

J = 150 °C

J = 25 °C

100

1000

10000

0.003

0.006

0.009

0.012

0.015

02468

Axis Title

GS - Gate-to-Source Voltage (V)

2nd line

J = 25 °C

J = 125 °C

D = 10 A

100

1000

10000

0.000001

0.00001

0.0001

0.001

0.01

100

125

150

Axis Title

GS - Gate-to-Source Voltage (V)

2nd line

= 30 V

DS = 10 V, 20 V

100

1000

10000

-1.0

-0.7

-0.4

-0.1

0.2

0.5

-50

-25

255075

100

125

150

Axis Title

J - Temperature (°C)

2nd line

D = 5 mA

D = 250 μA

100

1000

10000

120

160

200

0.001

0.01

0.1

Axis Title

Time (s)

2nd line

100

1000

10000

0.01

0.1

100

1000

0.01

0.1

100

Axis Title

DS - Drain-to-Source Voltage (V)

(1) V

GS > minimum VGS at which RDS(on) is specified

DM limited

Limited by R

DS(on)

(1)

a = 25 °C

Single pulse

BVDSS limited

100 ms

10 ms

1 ms

100 μs

10 s

D limited

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