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SISA40DN Datasheet(PDF) 1 Page - Vishay Siliconix |
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SISA40DN Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 9 page  SiSA40DN www.vishay.com Vishay Siliconix S18-0644-Rev. A, 25-Jun-2018 1 Document Number: 76681 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 N-Channel 20 V (D-S) MOSFET FEATURES • TrenchFET® Gen IV power MOSFET • Less than 1.1 m in a package footprint of 10.89 mm2 • 2.5 V rated RDS(on) • Optimized Qg, Qgd, and Qgd/Qgs ratio reduce switching related power loss • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Synchronous buck converter • Battery management • Load switching Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 81 °C/W g. TC = 25 °C PRODUCT SUMMARY VDS (V) 20 RDS(on) max. () at VGS = 10 V 0.00110 RDS(on) max. () at VGS = 4.5 V 0.00145 RDS(on) max. () at VGS = 2.5 V 0.00420 Qg typ. (nC) 18.2 ID (A) 162 a Configuration Single PowerPAK® 1212-8 Single Top View 1 3.3 mm 3.3 mm Bottom View 1 S 1 S 2 S 3 S 4 G D 8 D 7 D 6 D 5 N-Channel MOSFET G D S ORDERING INFORMATION Package PowerPAK 1212-8 Lead (Pb)-free and halogen-free SiSA40DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDS 20 V Gate-source voltage VGS +12 / -8 Continuous drain current (TJ = 150 °C) TC = 25 °C ID 162 A TC = 70 °C 129 TA = 25 °C 43.7 b, c TA = 70 °C 35 b, c Pulsed drain current (t = 100 μs) IDM 150 Continuous source-drain diode current TC = 25 °C IS 47 TA = 25 °C 3.3 b, c Single pulse avalanche current L = 0.1 mH IAS 20 Single pulse avalanche energy EAS 20 mJ Maximum power dissipation TC = 25 °C IP 52 W TC = 70 °C 33 TA = 25 °C 3.7 b, c TA = 70 °C 2.4 b, c Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) c 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b t 10 s RthJA 24 33 °C/W Maximum junction-to-case (drain) Steady state RthJF 1.9 2.4 |
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