STTH200L06TV datasheet(3/6 Pages) STMICROELECTRONICS

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STTH200L06TV

3/6

Figure 1: Conduction losses versus average

forward current (per diode)

Figure 2: Forward voltage drop versus forward

current (per diode)

Figure

Relative

variation

thermal

impedance junction to case versus pulse

duration

Figure 4: Peak reverse recovery current versus

dIF/dt (typical values, per diode)

Figure 5: Reverse recovery time versus dIF/dt

(typical values, per diode)

Figure 6: Reverse recovery charges versus

dIF/dt (typical values, per diode)

100

120

140

160

180

200

100

120

140

160

P(W)

δ=tp/T

δ = 1

δ = 0.05

(A)

F(AV)

δ = 0.1

δ = 0.2

δ = 0.5

100

120

140

160

180

200

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

(A)

T =150°C

(typical values)

T =25°C

(maximum values)

(V)

T =150°C

(maximum values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Z/R

th(j-c)

t (s)

Single pulse

(A)

100

150

200

250

300

350

400

450

500

dI /dt(A/µs)

I =2 x I

FF(AV)

I=I

FF(AV)

I =0.5 x I

FF(AV)

V =400V

T =125°C

200

400

600

800

1000

1200

1400

100

150

200

250

300

350

400

450

500

t (ns)

dI /dt(A/µs)

I=I

FF(AV)

I =0.5 x I

FF(AV)

V =400V

T =125°C

I =2 x I

FF(AV)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

100

200

300

400

500

Q (nC)

I =2 x I

FF(AV)

I=I

FF(AV)

I =0.5 x I

FF(AV)

V =400V

T =125°C

dI /dt(A/µs)

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