ADM7154ARDZ-3.3-R7 datasheet(20/23 Pages) AD

20 / 23 page

ADM7154

Data Sheet

Rev. B | Page 20 of 23

TOTAL POWER DISSIPATION (W)

1.8

2.0

2.2

2.4

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

100

110

120

130

160

150

140

6400mm2

500mm2

25mm2

TJ MAX

Figure 59. Junction Temperature vs. Total Power Dissipation for

the 8-Lead SOIC, TA = 50°C

TOTAL POWER DISSIPATION (W)

2.0

1.6

1.8

1.4

1.2

1.0

0.8

0.6

0.4

0.2

105

115

125

135

155

145

6400mm2

500mm2

25mm2

TJ MAX

Figure 60. Junction Temperature vs. Total Power Dissipation for

the 8-Lead SOIC, TA = 85°C

Thermal Characterization Parameter (ΨJB)

When board temperature is known, use the thermal

characterization parameter, ΨJB, to estimate the junction

temperature rise (see Figure 61 and Figure 62). Maximum

junction temperature (TJ) is calculated from the board

temperature (TB) and power dissipation (PD) using the following

formula:

TJ = TB + (PD × ΨJB)

(5)

The typical value of ΨJB is 15.1°C/W for the 8-lead LFCSP

package and 17.9°C/W for the 8-lead SOIC package.

TOTAL POWER DISSIPATION (W)

9.0

8.5

8.0

7.0

6.0

7.5

6.5

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

160

140

120

100

TB = 25°C

TB = 50°C

TB = 65°C

TB = 85°C

TJ MAX

Figure 61. Junction Temperature vs. Total Power Dissipation for

the 8-Lead LFCSP

TOTAL POWER DISSIPATION (W)

5.5

7.5

7.0

6.5

6.0

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

160

140

120

100

TB = 25°C

TB = 50°C

TB = 65°C

TB = 85°C

TJ MAX

Figure 62. Junction Temperature vs. Total Power Dissipation for

the 8-Lead SOIC

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