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TSMF1000 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # TSMF1000
Description  High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero
PDF  9 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSMF1000 Datasheet(HTML) 2 Page - Vishay Siliconix

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TSMF1000, TSMF1020, TSMF1030
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 30-Jun-11
2
Document Number: 81061
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
5V
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp  100 μs
IFM
200
mA
Surge forward current
tp = 100 μs
IFSM
0.8
A
Power dissipation
PV
180
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Soldering temperature
t
 5 s
Tsd
260
°C
Thermal resistance junction/ambient
Soldered on PCB, pad dimensions:
4 mm x 4 mm
RthJA
400
K/W
0
20
40
60
80
100
120
140
160
180
200
0
1020
3040506070
8090 100
21165
T
amb - Ambient Temperature (°C)
R
thJA = 400 K/W
0
20
40
60
80
100
120
0
10
203040
50607080
90 100
T
amb - Ambient Temperature (°C)
21166
R
thJA = 400 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 20 mA
VF
1.3
1.5
V
IF = 1 A, tp = 100 μs
VF
2.4
V
Temperature coefficient of VF
IF = 1 mA
TKVF
- 1.8
mV/K
Reverse current
VR = 5 V
IR
10
μA
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
160
pF
Radiant intensity
IF = 20 mA
Ie
2.5
5
13
mW/sr
IF = 100 mA, tp = 100 μs
Ie
25
mW/sr
Radiant power
IF = 100 mA, tp = 20 ms
e
35
mW
Temperature coefficient of
e
IF = 20 mA
TK
e
- 0.6
%/K
Angle of half intensity
± 17
deg
Peak wavelength
IF = 20 mA
p
890
nm
Spectral bandwidth
IF = 20 mA

40
nm
Temperature coefficient of
p
IF = 20 mA
TK
p
0.2
nm/K
Rise time
IF = 20 mA
tr
30
ns
Fall time
IF = 20 mA
tf
30
ns
Cut-off frequency
IDC = 70 mA, IAC = 30 mA pp
fc
12
MHz
Virtual source diameter
d
1.2
mm
PCN: OPT-1191-2021-REV-0, for updated datasheet please contact sensorstechsupport@vishay.com



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