HD1750JL datasheet(3/10 Pages) STMICROELECTRONICS

Part #	HD1750JL

Description	High Voltage NPN Power Transistor for High Definition and New Super-Slim CRT Display

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 10 page

HD1750JL

2 Electrical Characteristics

3/10

Electrical Characteristics

(TCASE = 25°C; unless otherwise specified)

Table 3.

Electrical Characteristics

Note: 1 Pulsed duration = 300

μs, duty cycle ≤1.5%.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off Current

(VBE = 0)

VCE = 1700V

VCE = 1700V___

_TC = 125°C

0.2

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5V

μA

VCEO(sus)

Note: 1

Collector-Emitter

Sustaining Voltage (IB = 0)

IC = 10mA

800

VEBO

Emitter-Base Voltage (IC = 0)

IE = 10mA

VCE(sat)

Note: 1

Collector-Emitter Saturation

Voltage

IC = 12A _____

IB = 3A

VBE(sat)

Note: 1

Base-Emitter Saturation Voltage

IC = 12A _____

IB = 3A

0.95

1.5

hFE

DC Current Gain

IC = 1A _

____ VCE = 5V

IC = 12A ___

_ VCE = 5V

5.5

8.5

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 12A ___ _ __

fh = 31250Hz

IB(on) = 1.8A__ _ _IB(off) = -7.25A

VCE(fly) = 1320V __VBE(off) = -2.7V

LBB(on) = 0.8μH

300

3.6

450

μs

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 6.5A

__ _ __ fh = 100kHz

IB(on) = 1.1A __ _ _IB(off) = -5.25A

VCE(fly) = 1220V __VBE(off) = -2.7V

LBB(on) = 0.25μH

1.6

110

220

μs

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