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STB270N04-1 Datasheet(PDF) 2 Page - STMicroelectronics |
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STB270N04-1 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 14 page ![]() Electrical ratings STB270N04-1 - STB270N04 - STP270N04 2/14 Rev3 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit TO-220/I²PAK D²PAK VDS Drain-Source Voltage (VGS = 0) 40 V VGS Gate-Source Voltage ± 20 V ID (1) 1. Current limited by package Drain Current (continuous) at TC = 25°C 120 160 A ID (1) Drain Current (continuous) at TC=100°C 120 160 A IDM (2) 2. Pulse width limited by safe operating area Drain Current (pulsed) 480 640 A PTOT Total Dissipation at TC = 25°C 330 W Derating Factor 2.2 W/°C dv/dt(3) 3. ISD ≤120A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Peak Diode Recovery voltage slope 3.5 V/ns EAS (4) 4. Starting Tj=25°C, Id =80A, Vdd=32V Single Pulse Avalanche Energy 1 J TJ Tstg Operating Junction Temperature Storage Temperature -55 to 175 °C Table 2. Thermal data Symbol Parameter Value Unit TO-220/I²PAK D²PAK Rthj-case Thermal resistance junction-case Max 0.45 °C/W Rthj-pcb (1) 1. When mounted on 1inch² FR-4 board, 2 oz Cu. Thermal resistance Junction-pcb Max -- 35 °C/W Rthj-a Thermal resistance junction-ambient Max 62.5 -- °C/W Tl Maximum lead temperature for soldering purpose (for 10 sec, 1.6mm from case) 300 -- °C |
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