STFV4N150 datasheet(1/10 Pages) STMICROELECTRONICS

Part #	STFV4N150

Description	N-CHANNEL 1500V - 5-ohm - 4A TO-220FH Very High Voltage PowerMESH-TM MOSFET

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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July 2005

STFV4N150

N-CHANNEL 1500V - 5

Ω - 4A TO-220FH

Very High Voltage PowerMESH™ MOSFET

Table 1: General Features

s

TYPICAL RDS(on) = 5 Ω

s

AVALANCHE RUGGEDNESS

s

GATE CHARGE MINIMIZED

s

VERY LOW INTRINSIC CAPACITANCES

s

HIGH SPEED SWITCHING

s

FULLY PLASTIC TO-220 PACKAGE

s

CREEPAGE DISTANCE PATH IS > 4mm

DESCRIPTION

Using the well consolidated high voltage MESH

OVERLAY™ process, STMicroelectronics has de-

signed an advanced family of Power MOSFETs

with outstanding performances. The strengthened

layout coupled with the Company’s proprietary

edge termination structure, gives the lowest

RDS(on) per area, unrivalled gate charge and

switching characteristics. The creepage path is

what makes this package unique from TO-220FP.

The creepage distance path between each lead

and between the leads and the heatsink has been

increased to >4.0mm, making this package met all

stringent safety norms in high voltage applications.

APPLICATIONS

s

SWITCH MODE POWER SUPPLIES

Table 2: Order Codes

Figure 1: Package

Figure 2: Internal Schematic Diagram

TYPE

VDSS

RDS(on)

ID

Pw

STFV4N150

1500 V

< 7

Ω

4 A

40 W

TO-220FH

SALES TYPE

MARKING

PACKAGE

PACKAGING

STFV4N150

FV4N150

TO-220FH

TUBE

Rev. 1

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STFV4N150 Datasheet(PDF) 1 Page - STMicroelectronics

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