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VSMS3700 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # VSMS3700
Description  Infrared Emitting Diode, 950 nm, GaAs
PDF  8 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

VSMS3700 Datasheet(HTML) 2 Page - Vishay Siliconix

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VSMS3700
www.vishay.com
Vishay Semiconductors
End of Life July-2021 - Alternative Device: VSML3710
Rev. 1.5, 15-Jul-2020
2
Document Number: 81373
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
5V
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp
= 100 μs
IFM
200
mA
Surge forward current
tp = 100 μs
IFSM
1.5
A
Power dissipation
PV
170
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
-40 to +85
°C
Storage temperature range
Tstg
-40 to +100
°C
Soldering temperature
According to Fig. 11, J-STD-020
Tsd
260
°C
Thermal resistance junction-to-ambient
J-STD-051, soldered on PCB
RthJA
250
K/W
0
20
40
60
80
100
120
140
160
180
0
1020
3040506070
8090100
21341
T
amb - Ambient Temperature (°C)
R
thJA = 250 K/W
0
20
40
60
80
100
120
0
10
203040
50607080
90 100
21342
R
thJA = 250 K/W
T
amb - Ambient Temperature (°C)
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 100 mA, tp = 20 ms
VF
-1.3
1.7
V
IF = 1 A, tp = 100 μs
VF
-1.8
-
V
Temperature coefficient of VF
IF = 100 mA
TKVF
--1.3-
mV/K
Reverse current
VR = 5 V
IR
-
-
100
μA
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
-30-
pF
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie
1.6
4.5
8
mW/sr
IF = 1.5 A, tp = 100 μs
Ie
-35-
mW/sr
Radiant power
IF = 100 mA, tp = 20 ms
φe
-15-
mW
Temperature coefficient of
φe
IF = 100 mA
TK
φe
-
-0.8
-
%/K
Angle of half intensity
ϕ
-± 60
-
°
Peak wavelength
IF = 100 mA
λp
-950
-
nm
Spectral bandwidth
IF = 100 mA
Δλ
-50-
nm
Temperature coefficient of
λp
IF = 100 mA
TK
λp
-0.2
-
nm/K
Rise time
IF = 20 mA
tr
-800
-
ns
IF = 1 A
tr
-400
-
ns
Fall time
IF = 20 mA
tf
-800
-
ns
IF = 1 A
tf
-400
-
ns
Virtual source diameter
EN 60825-1
d
-
0.5
-
mm



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