SQJ940EP datasheet(2/17 Pages) VISHAY

2 / 17 page

SQJ940EP

www.vishay.com

Vishay Siliconix

S13-0567-Rev. A, 18-Mar-13

Document Number: 62767

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

N-Ch 1

VGS = 0 V, ID = 250 μA

N-Ch 2

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

N-Ch 1

1.5

2.5

VDS = VGS, ID = 250 μA

N-Ch 2

1.5

2.5

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

N-Ch 1

± 100

N-Ch 2

± 100

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V

VDS 40 V

N-Ch 1

μA

VGS = 0 V

VDS = - 40 V

N-Ch 2

VGS = 0 V

VDS = 40 V, TJ = 125 °C

N-Ch 1

VGS = 0 V

VDS = 40 V, TJ = 125 °C

N-Ch 2

VGS = 0 V

VDS = 40 V, TJ = 175 °C

N-Ch 1

150

VGS = 0 V

VDS = 40 V, TJ = 175 °C

N-Ch 2

150

On-State Drain Currenta

ID(on)

VGS = 10 V

VDS 5 V

N-Ch 1

VGS = 10 V

VDS 5 V

N-Ch 2

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V

ID = 15 A

N-Ch 1

0.0133

0.0160



VGS = 10 V

ID = 20 A

N-Ch 2

0.0053

0.0064

VGS = 10 V

ID = 15 A, TJ = 125 °C

N-Ch 1

0.0270

VGS = 10 V

ID = 20 A, TJ = 125 °C

N-Ch 2

0.0105

VGS = 10 V

ID = 15 A, TJ = 175 °C

N-Ch 1

0.0334

VGS = 10 V

ID = 20 A, TJ = 175 °C

N-Ch 2

0.0130

VGS = 4.5 V

ID = 13 A

N-Ch 1

0.0157

0.0188

VGS = 4.5 V

ID = 18 A

N-Ch 2

0.0063

0.0076

Forward Transconductanceb

gfs

VDS = 15 V, ID = 15 A

N-Ch 1

VDS = 15 V, ID = 20 A

N-Ch 2

102

Dynamicb

Input Capacitance

Ciss

VGS = 0 V

VDS = 20 V, f = 1 MHz

N-Ch 1

717

896

VGS = 0 V

VDS = 20 V, f = 1 MHz

N-Ch 2

1850

2313

Output Capacitance

Coss

VGS = 0 V

VDS = 20 V, f = 1 MHz

N-Ch 1

118

148

VGS = 0 V

VDS = 20 V, f = 1 MHz

N-Ch 2

272

340

Reverse Transfer Capacitance

Crss

VGS = 0 V

VDS = 20 V, f = 1 MHz

N-Ch 1

VGS = 0 V

VDS = 20 V, f = 1 MHz

N-Ch 2

123

Total Gate Chargec

VGS = 10 V

VDS = 20 V, ID = 6 A

N-Ch 1

13.5

VGS = 10 V

VDS = 20 V, ID = 16 A

N-Ch 2

31.8

Gate-Source Chargec

Qgs

VGS = 10 V

VDS = 20 V, ID = 6 A

N-Ch 1

2.24

VGS = 10 V

VDS = 20 V, ID = 16 A

N-Ch 2

5.5

Gate-Drain Chargec

Qgd

VGS = 10 V

VDS = 20 V, ID = 6 A

N-Ch 1

2.06

VGS = 10 V

VDS = 20 V, ID = 16 A

N-Ch 2

4.7

Gate Resistance

f = 1 MHz

N-Ch 1

1.2

2.52



N-Ch 2

7.93

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