SQJ990EP datasheet(2/13 Pages) VISHAY

2 / 13 page

SQJ990EP

www.vishay.com

Vishay Siliconix

S16-1496-Rev. A, 25-Jul-16

Document Number: 77789

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

N-Ch 1

100

VGS = 0 V, ID = 250 μA

N-Ch 2

100

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

N-Ch 1

1.5

2.0

2.5

VDS = VGS, ID = 250 μA

N-Ch 2

1.5

2.0

2.5

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

N-Ch 1

± 100

N-Ch 2

± 100

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V

VDS = 100 V

N-Ch 1

μA

VGS = 0 V

VDS = 100 V

N-Ch 2

VGS = 0 V

VDS = 100 V, TJ = 125 °C

N-Ch 1

VGS = 0 V

VDS = 100 V, TJ = 125 °C

N-Ch 2

VGS = 0 V

VDS = 100 V, TJ = 175 °C

N-Ch 1

250

VGS = 0 V

VDS = 100 V, TJ = 175 °C

N-Ch 2

250

On-State Drain Current a

ID(on)

VGS = 10 V

VDS  5 V

N-Ch 1

VGS = 10 V

VDS  5 V

N-Ch 2

Drain-Source On-State Resistance a

RDS(on)

VGS = 10 V

ID = 6 A

N-Ch 1

0.0325

0.0400



VGS = 10 V

ID = 10 A

N-Ch 2

0.0154

0.0190

VGS = 10 V

ID = 6 A, TJ = 125 °C

N-Ch 1

0.0694

VGS = 10 V

ID = 10 A, TJ = 125 °C

N-Ch 2

0.0326

VGS = 10 V

ID = 6 A, TJ = 175 °C

N-Ch 1

0.0877

VGS = 10 V

ID = 10 A, TJ = 175 °C

N-Ch 2

0.0412

VGS = 4.5 V

ID = 4 A

N-Ch 1

0.0412

0.0505

VGS = 4.5 V

ID = 8 A

N-Ch 2

0.0191

0.0235

Forward Transconductance b

gfs

VDS = 10 V, ID = 6 A

N-Ch 1

VDS = 10 V, ID = 10 A

N-Ch 2

Dynamic b

Input Capacitance

Ciss

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 1

475

650

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 2

1065

1390

Output Capacitance

Coss

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 1

280

375

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 2

560

750

Reverse Transfer Capacitance

Crss

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 1

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 2

Total Gate Charge c

VGS = 10 V

VDS = 50 V, ID = 1 A

N-Ch 1

VGS = 10 V

VDS = 50 V, ID = 1 A

N-Ch 2

Gate-Source Charge c

Qgs

VGS = 10 V

VDS = 50 V, ID = 1 A

N-Ch 1

VGS = 10 V

VDS = 50 V, ID = 1 A

N-Ch 2

Gate-Drain Charge c

Qgd

VGS = 10 V

VDS = 50 V, ID = 1 A

N-Ch 1

VGS = 10 V

VDS = 50 V, ID = 60 A

N-Ch 2

Gate Resistance

f = 1 MHz

N-Ch 1

1.2

2.5

3.8



N-Ch 2

0.6

1.4

2.2

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