SIP32455 datasheet(2/11 Pages) VISHAY

2 / 11 page

SiP32454, SiP32455

www.vishay.com

Vishay Siliconix

S20-0528-Rev. B, 06-Jul-2020

Document Number: 62531

For technical questions, contact: powerictechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Device mounted with all leads and power pad soldered or welded to PC board, see PCB layout

b. Derate 3.6 mW/°C above TA = 25 °C



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating/conditions for extended periods may affect device reliability.

Notes

a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum

b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing

c. For VIN outside this range consult typical EN threshold curve

ABSOLUTE MAXIMUM RATINGS

PARAMETER

LIMIT

UNIT

Supply input voltage (VIN)

-0.3 to 2.75

Enable input voltage (VEN)

-0.3 to 2.75

Output voltage (VOUT)

-0.3 to 2.75

Maximum continuous switch current (Imax.)1.2

Maximum repetitive pulsed current (IDM) VIN (pulsed at 1 ms, 10 % duty cycle)

ESD rating (HBM)

4000

Junction temperature (TJ)

-40 to +150

°C

Thermal resistance (



JA)

280

°C/W

Power dissipation (PD) a

196

RECOMMENDED OPERATING RANGE

PARAMETER

LIMIT

UNIT

Input voltage range (VIN)

0.8 to 2.5

Operating junction temperature range (TJ)

-40 to +125

°C

SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS UNLESS SPECIFIED

VIN = 1 V, TA = -40 °C to +85 °C

(typical values are at TA = 25 °C)

LIMITS

UNIT

MIN. a

TYP. b

MAX. a

Operating voltage c

VIN

0.8

2.5

Quiescent current

VIN = 1.2 V, VEN = VIN, OUT = open

μA

VIN = 2.5 V, VEN = VIN, OUT = open

Off supply current

IQ(off)

SiP32454

EN = GND, OUT = open

SiP32455

Off switch current

IDS(off)

EN = GND, OUT = 0 V

Reverse blocking current

IRB

VOUT = 2.5 V, VIN = 0.9 V, VEN = 0 V

0.001

On-resistance

RDS(on)

VIN = 1 V, IL = 200 mA, TA = 25 °C



VIN = 1.2 V, IL = 200 mA, TA = 25 °C

VIN = 1.8 V, IL = 200 mA, TA = 25 °C

VIN = 2.5 V, IL = 200 mA, TA = 25 °C

On-resistance temp. coefficient

TCRDS

4100

ppm/°C

Output pull-down resistance

RPD

VEN = 0 V, TA = 25 °C (SiP32454 only)

417

550



EN input low voltage c

VIL

VIN = 1 V

0.1

EN input high voltage c

VIH

VIN = 2.5 V

1.5

EN input leakage

IEN

VIN = 2.5 V, VEN = 0 V

μA

VIN = 2.5 V, VEN = 2.5 V

6.5

Output turn-on delay time

td(on)

VIN = 1.2 V

RLOAD = 10 ,

CL = 0.1 μF, TA = 25 °C

-0.6

1.2

VIN = 2.5 V

0.6

1.2

Output turn-on rise time

VIN = 1.2 V

0.4

1.6

VIN = 2.5 V

0.5

1.5

2.5

Output turn-off delay time

td(off)

VIN = 1.2 V

0.3

μs

VIN = 2.5 V

0.1

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