SI7980DP datasheet(2/18 Pages) VISHAY

2 / 18 page

Vishay Siliconix

Si7980DP

www.vishay.com

Document Number: 68391

S13-0631-Rev. D, 25-Mar-13

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. Maximum under steady state conditions is 88 °C/W (channel-1) and 83 °C/W (channel-2).

c. Guaranteed by design, not subject to production testing.

d. Pulse test; pulse width

 300 µs, duty cycle  2 %.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Channel-1

Channel-2

Unit

Typ.

Max.

Typ.

Max.

Maximum Junction-to-Ambienta, b

 10 s

RthJA

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

6.3

4.5

5.7

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.c

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

Ch-1

VGS = 0 V, ID = 1 mA

Ch-2

VDS Temperature Coefficient

V

DS/TJ

ID = 250 µA

Ch-1

mV/°C

VGS(th) Temperature Coefficient

V

GS(th)/TJ

ID = 250 µA

Ch-1

- 5

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

Ch-1

2.5

VDS = VGS, ID = 1 mA

Ch-2

1.4

2.8

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 16 V

Ch-1

100

VDS = 0 V, VGS = ± 16 V

Ch-2

100

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

Ch-1

0.001

VDS = 20 V, VGS = 0 V

Ch-2

0.05

0.50

VDS = 20 V, VGS = 0 V, TJ = 100 °C

Ch-1

0.025

VDS = 20 V, VGS = 0 V, TJ = 100 °C

Ch-2

On-State Drain Currentd

ID(on)

VDS =5 V, VGS = 10 V

Ch-1

VDS =5 V, VGS = 10 V

Ch-2

Drain-Source On-State Resistanced

RDS(on)

VGS = 10 V, ID = 5 A

Ch-1

0.018

0.022



VGS = 10 V, ID = 5 A

Ch-2

0.012

0.015

VGS = 4.5 V, ID = 4 A

Ch-1

0.020

0.025

VGS = 4.5 V, ID = 4 A

Ch-2

0.015

0.019

Forward Transconductanced

gfs

VDS = 15 V, ID = 5 A

Ch-1

VDS = 15 V, ID = 5 A

Ch-2

Dynamicc

Input Capacitance

Ciss

Channel-1

VDS = 10 V, VGS = 0 V, f = 1 MHz

Channel-2

VDS = 10 V, VGS = 0 V, f = 1 MHz

Ch-1

1010

Ch-2

1370

Output Capacitance

Coss

Ch-1

220

Ch-2

320

Reverse Transfer Capacitance

Crss

Ch-1

100

Ch-2

120

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