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SAMWIN
SW830
REV0.1
04.10.1
10
0
10
1
10
-1
10
0
10
1
4.5V
V
GS
top: 15V
10V
9V
8V
7V
6V
5.5V
5V
bottom:4.5V
V
DS
,Drain-to-Source voltage [V]
02
46
8
10
12
14
16
0
1
2
3
4
I
D
, Drain Current[A]
V
GS
=20V
V
GS
=10V
Fig 1. On-State Characteristics
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 2. Transfer Characteristics
Fig 6. Gate Charge Characteristics
Fig 5. Capacitance Characteristics
(Non-Repetitive)
150
25
0
5
10
15
20
25
0
2
4
6
8
10
Note:I
D
=5A
V
DS
=100V
V
DS
=250V
V
DS
=400V
Q
G
,Total Gate Charge [nC]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
-1
10
0
10
1
Note:
1.v
GS
=0v
2.250us test
V
SD
,Source-Drain Voltage[V]
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