VP0808 datasheet(2/12 Pages) MICROCHIP

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VP0808

DS20006004A-page 2



2022 Microchip Technology Inc. and its subsidiaries

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings†

Drain-to-Source Voltage ...................................................................................................................................... BVDSS

Drain-to-Gate Voltage ......................................................................................................................................... BVDGS

Gate-to-Source Voltage ......................................................................................................................................... ±30V

Operating Ambient Temperature, TA ................................................................................................... –55°C to +150°C

Storage Temperature, TS ..................................................................................................................... –55°C to +150°C

† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only, and functional operation of the device at those or any other conditions above those

indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for

extended periods may affect device reliability.

DC ELECTRICAL CHARACTERISTICS

Electrical Specifications: TA = 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless

otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle

Parameter

Sym.

Min. Typ. Max. Unit

Conditions

Drain-to-Source Breakdown Voltage

BVDSS

–80

—

VGS = 0V, ID = –10 µA

Gate Threshold Voltage

VGS(th)

–1

—

–4.5

VGS = VDS, ID = –1 mA

Gate Body Leakage Current

IGSS

—

— –100

VGS = ±20V, VDS = 0V

(

Note 1)

Zero-Gate Voltage Drain Current

IDSS

—

–10

µA

VGS = 0V,

VDS = Maximum rating

—

— –500

µA

VDS = 0.8 Maximum rating,

VGS = 0V, TA = 125°C

(

Note 1)

On-State Drain Current

ID(ON)

–1.1

—

VGS = –10V, VDS = –15V

Static Drain-to-Source On-State Resistance

RDS(ON)

—

VGS = –10V, ID = –1A

Note 1: Specification is obtained by characterization and is not 100% tested.

AC ELECTRICAL CHARACTERISTICS

Electrical Specifications: TA = 25°C unless otherwise specified. All AC parameters are not 100% sample tested.

Parameter

Sym.

Min. Typ. Max. Unit

Conditions

Forward Transconductance

GFS

200

—

mmho VDS = –10V, ID = –500 mA

Input Capacitance

CISS

—

150

VGS = 0V,

VDS = –25V,

f = 1 MHz

Common-Source Output Capacitance

COSS

—

Reverse Transfer Capacitance

CRSS

—

Turn-On Delay Time

td(ON)

—

VDD = –25V,

ID = –500 mA,

RGEN = 25Ω

Rise Time

—

Turn-Off Delay Time

td(OFF)

—

Fall Time

—

DIODE PARAMETER

Diode Forward Voltage Drop

VSD

—

–1.2

—

VGS = 0V, ISD = –900 mA

(

Note 1)

Note 1: Unless otherwise stated, all DC parameters are 100% tested at 25°C. Pulse test: 300 µs pulse, 2% duty

cycle

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