DG2002E datasheet(2/11 Pages) VISHAY

2 / 11 page

DG2002E

www.vishay.com

Vishay Siliconix

S18-0422-Rev. C, 23-Apr-18

Document Number: 76624

For technical questions, contact: analogswitchtechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. All leads welded or soldered to PC board

b. Derate 3.1 mW/°C above 70 °C



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

LIMIT

UNIT

V+, COM, NC, NO, IN reference to GND

-0.3 to 6

Continuous current (any terminal)

± 50

Peak current (pulsed at 1 ms, 10 % duty cycle)

± 200

Storage temperature

-65 to +150

°C

Power dissipation (packages) a

6-pin SC-70 b

250

ESD / HBM

JS-001

7000

ESD / CDM

JS-002

1000

Latch up

Per JESD78 with

1.5 x voltage clamp

200

SPECIFICATIONS (V+ = 5 V)

PARAMETER

SYMBOL

TEST CONDITIONS

UNLESS OTHERWISE SPECIFIED

V+ = 5 V, ± 10 %

VIN = 0.8 V or 2.4 V e

TEMP.a

LIMITS

-40 °C to +85 °C

UNIT

MIN. b

TYP. c

MAX. b

Analog Switch

Analog signal range d

VNO, VNC

VCOM

Full

V+

Drain-source on-resistance d

RDS(on)

V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA

Room



Full

RDS(on) flatness d

RDS(on)

flatness

V+ = 5 V, VCOM = 1.5 V, 3.5 V, INO, INC = 10 mA

Room

0.4

RDS(on) match d

R

DS(on)

V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA

Room

0.04

0.2

Switch-off leakage current f

INO(off),

INC(off)

V+ = 5.5 V,

VNO, VNC = 1 V / 4.5 V, VCOM = 4.5 V / 1 V

Room

-1.5

1.5

Full

-4

ICOM(off)

Room

-1

Full

-4

Channel-on leakage current f

ICOM(on)

V+ = 5.5 V,

VNO, VNC = VCOM = 1 V / 4.5 V

Room

-1

Full

-4

Power-down leakage

IPD

V+ = 0 V, VCOM = 5 V, NO/NC open, VIN = GND

Full

μA

V+ = 0 V, VNO, VNC = 5 V, COM open, VIN = GND

Full

Digital Control

Input high voltage

VINH

Full

2.4

Input low voltage

VINL

Full

0.8

Input capacitance d

CIN

Full

Input current

IINL or IINH

VIN = 0 V or V+

Full

-1

μA

Dynamic Characteristics

Turn-on time d

tON

VNO or VNC = 3 V, RL = 300 , CL = 35 pF

Room

Full

Turn-off time d

tOFF

Room

Full

Break-before-make time d

tBBM

Room

Charge injection d

QINJ

CL = 1 nF, VGEN = 0 V, VNO, VNC = 0 V, RGEN = 0 

Room

Off-isolation d

OIRR

RL = 50 , CL = 5 pF, f = 1 MHz

Room

-78

Crosstalk d

XTALK

Room

-77

NO, NC off capacitance d

CNO(off)

VIN = 0 V or V+, f = 1 MHz

Room

CNC(off)

Room

Channel-on capacitance d

CON

Room

Power Supply

Power supply current d

I+

VIN = 0 V or V+

Full

0.004

μA

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