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DG2501 Datasheet(PDF) 4 Page - Vishay Siliconix

Part # DG2501
Description  200 Ω, Low Leakage, Low Parasitic and Low Charge Injection, Quad SPST Analog Switches
PDF  10 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

DG2501 Datasheet(HTML) 4 Page - Vishay Siliconix

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DG2501, DG2502, DG2503
www.vishay.com
Vishay Siliconix
S17-1317-Rev. B, 21-Aug-17
4
Document Number: 62962
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. VIN = input voltage to perform proper function
b. Room = 25 °C, Full = as determined by the operating temperature suffix
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing
d. The convention where the most negative value is a minimum and the most positive a maximum, is used in this data sheet
e. Guaranteed by design, not subject to production test
ELECTRICAL CHARACTERISTICS 5 V Supply
PARAMETER
SYMBOL
TEST CONDITION
UNLESS OTHERWISE SPECIFIED,
V+ = 5 V
VINH = 1.8 V, VINL = 0.5 V a
TEMP. b
TYP. c
-40 °C to +85 °C
UNIT
MIN. d
MAX. d
Analog Switch
Analog signal range e
VANALOG
Full
-
0
5
V
Drain-source on resistance
RDS(on)
VS = 2.5 V, IS = -1 mA
Room
104
-
150
Full
-
-
200
On-resistance matching
R
on
Room
0.39
-
8
Full
-
-
10
Switch off leakage current
IS/ID(off)
V+ = 5.5 V,
VS = 1 V/4.5 V, VD = 4.5 V/1 V
Room
± 0.022
-0.4
+0.4
nA
Full
-
-1
+1
Channel on leakage
current
ID(on)
V+ = 5.5 V,
VD = 4.5 V/1 V
Room
± 0.017
-0.4
+0.4
Full
-
-1
+1
Digital Control
Input, high voltage
VINH
Full
-
1.8
-
V
Input, low voltage
VINL
Full
-
-
0.5
Input leakage
IIN
VIN = VGND or V+
Room
± 0.001
-
-
μA
Full
-
-1
+1
Digital input capacitance e
CIN
f = 1 MHz
Room
2
-
-
pF
Dynamic Characteristics
Break-before make time
tBBM
DG2503 only, VS1 = VS2 = 3 V,
RL = 300  CL = 35 pF
Room
25
10
-
ns
Full
-
10
-
Turn-on time
tON
VS = 3 V, RL = 300 , CL = 35 pF
Room
64
-
100
Full
-
-
150
Turn-off time
tOFF
Room
38
-
60
Full
-
-
100
Charge injection e
QINJ
CL = 1 nF, RGEN = 0 , VS = 3 V
Room
-2
-
-
pC
Off isolation e
OIRR
RL = 50 , CL = 5 pF, f = 1MHz
Room
-84
-
-
dB
Cross talk e
X Talk
Room
-83
-
-
3 dB bandwidth e
BW
RL = 50 , CL = 5 pF
Room
550
-
-
MHz
Source off capacitance e
CS(off)
f = 1 MHz, VS = 3 V
Room
2.7
-
-
pF
Drain off capacitance e
CD(off)
Room
2.6
-
-
Drain on capacitance e
CD(on)
Room
7.6
-
-
Power Requirements
Power supply current
I+
Digital input = 1.8 V, at one channel
V+ = 5 V
Room
4.6
-
-
μA
Full
-
-
30
Digital input 0 or V+
Room
0.001
-
-
Full
-
-
2



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