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SI7922DN Datasheet(PDF) 2 Page - Vishay Siliconix

Part # SI7922DN
Description  Dual N-Channel 100-V (D-S) MOSFET
PDF  12 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7922DN Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number: 72031
S-81544-Rev. E, 07-Jul-08
Vishay Siliconix
Si7922DN
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
2.5
3.5
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
1
µA
VDS = 100 V, VGS = 0 V, TJ = 85 °C
5
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
10
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 2.5 A
0.162
0.195
Ω
VGS = 6 V, ID = 2.3 A
0.190
0.230
Forward Transconductancea
gfs
VDS = 10 V, ID = 2.5 A
5.3
S
Diode Forward Voltagea
VSD
IS = 2.2 A, VGS = 0 V
0.8
1.2
V
Dynamicb
Total Gate Charge
Qg
VDS = 50 V, VGS = 10 V, ID = 2.5 A
5.2
8
nC
Gate-Source Charge
Qgs
1.1
Gate-Drain Charge
Qgd
1.9
Gate Resistance
Rg
1.7
Ω
Turn-On Delay Time
td(on)
VDD = 50 V, RL = 50 Ω
ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω
715
ns
Rise Time
tr
11
20
Turn-Off DelayTime
td(off)
815
Fall Time
tf
11
20
Source-Drain Reverse Recovery Time
trr
IF = 2.2 A, dI/dt = 100 A/µs
40
80
Output Characteristics
0
2
4
6
8
10
01234
5678
VGS = 10 thru 6 V
5 V
VDS - Drain-to-Source Voltage (V)
4 V
3 V
Transfer Characteristics
0
2
4
6
8
10
0123456
TC = 125 °C
- 55 °C
25 °C
VGS - Gate-to-Source Voltage (V)



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