VN0808LS datasheet(2/5 Pages) VISHAY

2 / 5 page

VN0808L/LS, VQ1006P

Vishay Siliconix

www.vishay.com

11-2

Document Number: 70214

S-04279—Rev.D, 16-Jul-01

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

VN0808L/LS

VQ1006P

Parameter

Symbol

Test Conditions

Typa

Min

Max

Min

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 10 mA

125

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 1 mA

1.6

0.8

2.5

VDS = 0 V, VGS = "15 V

"100

Gate-Body Leakage

IGSS

TJ = 125_C

"500

VDS = 80 V, VGS = 0 V

TJ = 125_C

500

Zero Gate Voltage Drain Current

IDSS

VDS = 72 V, VGS = 0 V

TJ = 125_C

500

On-State Drain Currentb

ID(on)

VDS = 10 V, VGS = 10 V

1.8

1.5

VGS = 5 V, ID = 0.3 A

3.8

Drain-Source On-Resistanceb

rDS(on)

VGS = 10 V, ID = 1 A

3.6

4.5

TJ = 125_C

6.7

8.6

Forward Transconductanceb

gfs

VDS = 10 V, ID = 0.5 A

350

170

Common Source Output Conductanceb

gos

VDS = 10 V, ID = 0.1 A

0.23

Dynamic

Input Capacitance

Ciss

Output Capacitance

Coss

VDS = 25 V, VGS = 0 V, f = 1 MHz

Reverse Transfer Capacitance

Crss

Switchingc

Turn-On Time

tON

VDD = 25 V, RL = 23 W

Turn-Off Time

tOFF

ID ^ 1 A, VGEN = 10 V

RG = 25 W

Notes

For DESIGN AID ONLY, not subject to production testing..

VNDQ09

Pulse test: PW

v300 ms duty cycle v2%.

Switching time is essentially independent of operating temperature.

VN0808LS Datasheet(PDF) 2 Page - Vishay Siliconix

VN0808LS Datasheet(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4 5

Datasheet Download

Link URL