BAS40WS datasheet(1/3 Pages) JIANGSU

Part #	BAS40WS

Description	SCHOTTKY DIODE

PDF	3 Pages

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOD-323 Plastic-Encapsulate Diode

2.65

1.70

SOD-323

·

Low Turn-on Voltage

·

Fast Switching

·

PN Junction Guard Ring for Transient and

ESD Protection

Notes:

1. Valid Provided that terminals are kept at ambient temperature.

Characteristic

Symbol

BAS40

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

40

V

Forward Continuous Current (Note 1)

IFM

200

mA

Power Dissipation (Note 1)

Pd

350

mW

Forward Surge Current (Note 1)

@ t < 1.0s

IFSM

600

mA

Thermal Resistance, Junction to Ambient Air (Note 1)

RqJA

357

°C/W

Operating Junction Temperature Range

Tj

-55 to +125

°C

Storage Temperature Range

TSTG

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage

V(BR)R

40

—

V

IR= 10mA

Forward Voltage

VF

——

380

1000

mV

tp < 300ms, IF = 1.0mA

tp < 300ms, IF = 40mA

Reverse Leakage Current

IR

—

20

200

nA

tp < 300ms, VR = 30V

Junction Capacitance

Cj

—

4.0

5.0

pF

VR = 0V, f =1.0MHz

Reverse Recovery Time

trr

——

5.0

ns

IF = IR = 10mA to IR = 1.0mA,

RL = 100W

Maximum Ratings @ TA = 25°C unless otherwise specified

Electrical Characteristics @ TA = 25°C unless otherwise specified

Marking:

BAS40WS

SCHOTTKY DIODE

1 /1

Unit:mm

BAS40WS:43

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