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MS1004 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MS1004 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 Schottky Barrier Rectifier MS1004 FEATURES · Guard -Ring for Stress Protection · Low Forward Voltage · High Operating Junction Temperature · Low Power Loss/High Efficiency · High surge capability · Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS · Case: Epoxy, Molded ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 40 V IF(AV) Average Rectified Forward Current ) TC= 125℃ 10 A IFSM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half-wave, single phase, 60Hz) 225 A TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 10,000 V/μs |
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