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STFW4N150 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STFW4N150 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor STFW4N150 · FEATURES · Drain Current ID= 4A@ TC=25℃ · Drain Source Voltage- : VDSS= 1500V(Min) · Static Drain-Source On-Resistance : RDS(on) < 7Ω · Fast Switching · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Switching power supplies,converters,AC and DC motor controls · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1500 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 4 A IDM Drain Current-Single Plused 12 A PD Total Dissipation @TC=25℃ 40 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.125 ℃ /W |
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