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MA170 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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MA170 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
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1 / 2 page  Switching Diodes 1 MA2B170, MA2B171 Silicon epitaxial planar type For high-speed switching circuits I Features • Large forward current I F(AV) • High switching speed • Small terminal capacitance, C t I Absolute Maximum Ratings T a = 25 °C 1 : Cathode 2 : Anode JEDEC : DO-35 Unit : mm Parameter Symbol Rating Unit Reverse voltage MA2B170 VR 40 V (DC) MA2B171 80 Repetitive peak MA2B170 VRRM 40 V reverse voltage MA2B171 80 Average forward current IF(AV) 200 mA Repetitive peak forward current IFRM 600 mA Non-repetitive peak IFSM 1A forward surge current* Junction temperature Tj 200 °C Storage temperature Tstg −55 to +200 °C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) MA2B170 IR1 VR = 15 V 50 nA MA2B171 MA2B170 IR2 VR = 35 V 500 nA MA2B171 VR = 75 V 500 MA2B170 IR VR = 35 V, Ta = 150 °C 100 µA MA2B171 VR = 75 V, Ta = 150 °C 100 Forward voltage (DC) VF IF = 200 mA 1.1 V Terminal capacitance Ct VR = 0 V, f = 1 MHz 4 pF Reverse recovery time* trr IF = 10 mA, VR = 1 V 20 ns Irr = 0.1 · IR, RL = 100 Ω I Electrical Characteristics T a = 25°C Note) * : t = 1 s Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Type No. MA2B170 MA2B171 Color 1st Band Violet Violet 2nd Band White Green I Cathode Indication φ 0.56 max. φ 1.95 max. COLORED BAND INDICATES CATHODE 1st Band 2nd Band 1 2 Bias Application Unit N-50BU 90% Pulse Generator (PG-10N) R s = 50 Ω W.F.Analyzer (SAS-8130) R i = 50 Ω t p = 2 µs t r = 0.35 ns δ = 0.05 I F = 10 mA V R = 1 V R L = 100 Ω 10% Input Pulse Output Pulse I rr = 0.1 · IR t r t p t rr V R I F t t A |
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