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MA162A Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part # MA162A
Description  Silicon epitaxial planar type
PDF  2 Pages
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

MA162A Datasheet(HTML) 1 Page - Panasonic Semiconductor

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Switching Diodes
1
MA2B150, MA2B161, MA2B162, MA2B162A
Silicon epitaxial planar type
For switching circuits
I Features
• Short reverse recovery time t
rr
• Small terminal capacitance, C
t
I Absolute Maximum Ratings T
a = 25°C
1 : Cathode
2 : Anode
JEDEC : DO-35
Unit : mm
Parameter
Symbol
Rating
Unit
Reverse voltage
MA2B150
VR
35
V
(DC)
MA2B161
50
MA2B162
75
MA2B162A
120
Repetitive peak
MA2B150
VRRM
35
V
reverse voltage
MA2B161
50
MA2B162
75
MA2B162A
120
Average forward current
IF(AV)
100
mA
Repetitive peak forward current
IFRM
225
mA
Non-repetitive peak forward
IFSM
500
mA
surge current*
Junction temperature
Tj
200
°C
Storage temperature
Tstg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
MA2B150
IR
VR = 15 V
0.025
µA
VR = 30 V
0.1
MA2B161
VR = 15 V
0.025
VR = 50 V
5
MA2B162
VR = 20 V
0.012
0.025
VR = 75 V
5
MA2B162A
VR = 20 V
0.012
0.025
VR = 120 V
5
MA2B150
VR = 35 V, Ta = 150
°C
100
MA2B161
VR = 50 V, Ta = 150
°C
100
MA2B162
VR = 75 V, Ta = 150
°C
50
100
MA2B162A
VR = 75 V, Ta = 150
°C
50
100
Forward voltage (DC)
VF
IF = 100 mA
0.95
1.2
V
Reverse voltage (DC)
MA2B150
VR
IR = 5
µA35
V
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
0.9
2
pF
Reverse recovery time* MA2B150
trr
IF = 10 mA, VR = 1 V, RL = 100 Ω
10
ns
MA2B161/162/162A
Measure when Irr = 0.1 · IR
2.2
4
I Electrical Characteristics T
a = 25°C
Note) * : t = 1 s
Note) 1. Rated input/output frequency:
100 MHz
2. * : trr measuring circuit
Type No.
MA2B150
MA2B161
MA2B162
MA2B162A
Color
1st Band
White
Green
Violet
Black
2nd Band



Black
I Cathode Indication
φ 0.56 max.
φ 1.95 max.
COLORED BAND
INDICATES
CATHODE
1st Band
2nd Band
1
2


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