MP4T243 Series

V3.00

pecification Subject to Change Without Notice

M-Pulse Microwave____________________________________________________________________________________

2

576 Charcot Avemue, San Jose, California 95131

Tel (408) 432-1480

Fax (408)) 432-3440

Absolute Maximum Ratings @ 25

°C

Parameter

Symbol

Unit

MP4T24300

Chip

MP4T24335

Micro-X

Collector-Base Voltage

1

Volts

25

25

Collector-Emitter Voltage

1

Volts

12

12

Emitter-Base Voltage

1

Volts

1.5

1.5

Collector Current

1

mA

110

110

Junction Temperature

°C

200

200

Storage Temperature

°C

-65 to +200

-65 to +200

Power Dissipation

1,3

mW

1000

400

Operating Temperature

2

°C

150

150

1. At 25

°C case temperature (packaged transistors) or 25°C mounting surface temperature (chip transistors).

2. Case or bonding surface temperature. Derate maximum power dissipation rating to zero watts at maximum operating temperature.

3. The thermal resistance of the MP4T24300 junction/case is 50

°C/watt nominal.

Electrical Specifications @ 25

°C

Parameter

Condition

Symbol

Units

MP4T24300

Chip

MP4T24335

Micro-X

Gain Bandwidth Product

GHz

7 typ

7 typ

Insertion Power Gain

2

dB

f = 1 GHz

12 min

11 min

f = 2 GHz

8 typ

8 typ

Noise Figure

NF

dB

f = 1 GHz

3 typ

3 typ

Unilateral Gain

GTU (max)

aB

f = 2 GHz

11 typ

10.5 typ

Maximum Available Gain

MAG

dB

f = 2 GHz

15 typ

15 typ

Power Out at 1 dB Compression

dBm

f = 1 GHz

24 typ

24 typ

f = 2 GHz

22 typ

22 typ