BLS9G3135L-400_LS-400

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Product data sheet

Rev. 1 — 6 April 2017

4 of 13

BLS9G3135L(S)-400

LDMOS S-band radar power transistor

7. Test information

7.1 Ruggedness in class-AB operation

The BLS9G3135L-400 and BLS9G3135LS-400 are capable of withstanding a load

mismatch corresponding to VSWR = 10 : 1 through all phases under the following

7.2 Impedance information

Table 8.

Typical impedance

f

(GHz)

(

)

(

)

3.1

4.122

 j8.679

1.206

 j4.231

3.2

6.215

 j3.927

1.593

 j4.396

3.3

4.334

 j3.313

1.885

 j4.262

3.4

2.085

 j2.187

2.473

 j3.915

3.5

1.976

 j2.700

2.313

 j3.180

Fig 1.

Definition of transistor impedance

001aaf059

drain

gate