ART35FEU datasheet(10/19 Pages) AMPLEON

10 / 19 page

ART35FE

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Product data sheet

Rev. 1 — 7 December 2020

10 of 19

ART35FE

Power LDMOS transistor

Test information

8.1 Ruggedness in class-AB operation

The ART35FE is capable of withstanding a load mismatch corresponding to

VSWR = 65

 1 through all phases under the following conditions: V

DS =65V;

IDq =20mA; PL = 35 W; f = 108 MHz; CW and CW pulsed (tp =100 s;  =10%).

8.2 Impedance information

VDS =65V; IDq = 10 mA; f = 94.5 MHz; CW.

(1) PL(1dB) = 46.1 dBm (41.2 W)

(2) PL(3dB) = 47.1 dBm (50.9 W)

Fig 10. Power gain and drain efficiency as function of

output power; typical values

Fig 11. Output power as a function of input power;

typical values

amp01539

PL (W)

(dB)

ηD

(%)

ηD

amp01540

Pi (dBm)

PLLL

(dBm)

(((d

m)))))

(dBm)

PLLL

Ideal P

deal P

PLLL

Ideal PL

(1)

(2)

((2

(2)

Fig 12. Definition of transistor impedance

Table 12.

Typical push-pull impedance

Simulated Zi and ZL device impedance.

(MHz)

(

)

(

)

(W)

VDS =65V

108

10.4

 j52.5

38.7 + j28.8

VDS =35V

108

10.4

 j52.5

36.4 + j23.0

amp01313

gate

drain

ART35FEU Datasheet(PDF) 10 Page - Ampleon Netherlands B.V.

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