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V8P10 Datasheet(PDF) 1 Page - Vishay Siliconix |
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V8P10 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 5 page ![]() V8P10 www.vishay.com Vishay General Semiconductor Revision: 18-Dec-2019 1 Document Number: 89005 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.466 V at IF = 4 A ADDITIONAL RESOURCES FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test PRIMARY CHARACTERISTICS IF(AV) 8.0 A VRRM 100 V IFSM 150 A EAS 100 mJ VF at IF = 8 A 0.582 V TJ max. 150 °C Package SMPC (TO-277A) Diode variations Single K 2 1 SMPC (TO-277A) eSMP® Series Anode 1 Anode 2 Cathode K 333 DDD3 D 3D Models Available MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V8P10 UNIT Device marking code V810 Maximum repetitive peak reverse voltage VRRM 100 V Maximum average forward rectified current (fig. 1) IF(AV) 8.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 150 A Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C EAS 100 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C IRRM 1.0 A Operating junction and storage temperature range TJ, TSTG -40 to +150 °C |
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