BLF974P datasheet(4/18 Pages) AMPLEON

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BLF974P

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Product data sheet

Rev. 1 — 26 March 2020

4 of 18

BLF974P

HF / VHF power LDMOS transistor

Test information

7.1 Ruggedness in class-AB operation

The BLF974P is capable of withstanding a load mismatch corresponding to

VSWR = 13 : 1 through all phases under the following conditions: VDS =50V;

IDq = 50 mA per section; PL = 500 W; f = 225 MHz; CW pulsed (tp = 100 s;  =10%).

VGS = 0 V; f = 1 MHz.

Fig 2.

Output capacitance as a function of drain-source voltage; typical values per

section

Table 8.

RF characteristics

Test signal: CW pulsed; tp =100 s;  = 10 %; f = 225 MHz; RF performance at VDS =50V;

IDq = 50 mA per section; Tcase = 25 C; unless otherwise specified; in a class-AB production test

circuit.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

power gain

PL = 500 W

24.5

25.7

RLin

input return loss

PL = 500 W

19

15



drain efficiency

PL = 500 W

amp01077

100

150

200

250

300

VDS (V)

Coss

oss

Coss

(pF)

BLF974P Datasheet(PDF) 4 Page - Ampleon Netherlands B.V.

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