SS1P3, SS1P4

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Vishay General Semiconductor

Revision: 08-Mar-2022

1

Document Number: 88935

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

High Current Density Surface-Mount

Schottky Barrier Rectifiers

LINKS TO ADDITIONAL RESOURCES

FEATURES

• Very low profile - typical height of 1.0 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Material categorization: for definitions of compliance

TYPICAL APPLICATIONS

For

use

in

low

voltage

high

frequency

inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

Note

• These devices are not AEC-Q101 qualified

MECHANICAL DATA

Case: SMP (DO-220AA)

Molding compound meets UL 94 V-0 flammability rating

Base

P/N-M3

-

halogen-free,

RoHS-compliant,

and

commercial grade

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test

Polarity: color band denotes the cathode end

Notes

≤ 40 ms

PRIMARY CHARACTERISTICS

1.0 A

30 V, 40 V

30 A

10 mJ

0.40 V, 0.45 V

150 °C

Package

SMP (DO-220AA)

Circuit configuration

Single

SMP (DO-220AA)

Cathode

Anode

333

DDD3 D

3D Models

PARAMETER

SYMBOL

SS1P3

SS1P4

UNIT

Device marking code

13

14

Maximum repetitive peak reverse voltage

30

40

V

Maximum average forward rectified current (fig. 1)

1.0

A

Peak forward surge current 10 ms single half sine-wave superimposed

on rated load

30

A

10

mJ

dV/dt

10 000

V/μs

Operating junction and storage temperature range

-55 to +150

°C

PARAMETER

TEST CONDITIONS

SYMBOL

SS1P3

SS1P4

UNIT

Maximum instantaneous forward voltage

0.50

0.53

V

0.40

0.45

150

μA

15

mA

Typical junction capacitance

4.0 V, 1 MHz

70

pF