CMSD2005S

SURFACE MOUNT

DUAL, IN SERIES

HIGH VOLTAGE

SILICON SWITCHING DIODES

SOT-323 CASE

Central

Semiconductor Corp.

TM

R0 (17-August 2004)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR

CMSD2005S contains two (2) High Voltage

Silicon Switching Diodes, manufactured by the

epitaxial planar process, epoxy molded in a

SOT-323 surface mount package, designed for

applications requiring high voltage capability.

MARKING CODE: B5D

MAXIMUM RATINGS (TA=25°C)

SYMBOL

UNITS

Continuous Reverse Voltage

VR

300

V

Peak Repetitive Reverse Voltage

VRRM

350

V

Peak Repetitive Reverse Current

IO

200

mA

Continuous Forward Current

IF

225

mA

Peak Repetitive Forward Current

IFRM

625

mA

Forward Surge Current, tp= 1µs

IFSM

4.0

A

Forward Surge Current, tp= 1s

IFSM

1.0

A

Power Dissipation

PD

275

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

455

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IR

VR=280V

100

nA

IR

VR=280V, TA=150°C

100

µA

BVR

IR=100µA

350

V

VF

IF=20mA

0.87

V

VF

IF=100mA

1.0

V

VF

IF=200mA

1.25

V

CT

VR=0, f=1.0 MHz

5.0

pF

trr

IR=IF=30mA, Rec. to 3.0mA, RL=100Ω

50

ns