BAS85 datasheet(2/4 Pages) VISHAY

2 / 4 page

BAS85

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Vishay Semiconductors

Rev. 2.1, 16-Nov-2021

Document Number: 85510

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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Max. Reverse Power Dissipation vs.

Junction Temperature

Fig. 2 - Forward Current vs. Forward Voltage

Fig. 3 - Reverse Current vs. Junction Temperature

Fig. 4 - Diode Capacitance vs. Reverse Voltage

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Reserve breakdown voltage

IR = 10 μA (pulsed)

V(BR)

Leakage current

VR = 25 V

0.2

μA

Forward voltage

Pulse test tp < 300 μs,

IF = 0.1 mA

240

Pulse test tp < 300 μs, IF = 1 mA

320

Pulse test tp < 300 μs,

IF = 10 mA

400

Pulse test tp < 300 μs,

IF = 30 mA

500

Pulse test tp < 300 μs,

IF = 100 mA

800

Diode capacitance

VR = 1 V, f = 1 MHz

Reserve recovery time

IF = 10 mA, IR = 10 mA,

iR = 1 mA

trr

5ns

100

120

140

160

180

200

100

125

150

j - Junction Temperature (°C)

15822

R = 30 V

thJA = 540 kW

R - Limit

at 100 % V

R - Limit

at 80 % V

0.5

1.0

1.5

15824

0.1

100

1000

j = 125 °C

F - Forward Voltage (V)

j = 25 °C

100

1000

100

125

150

15823

R = VRRM

j - Junction Temperature (°C)

0.1

100

15825

f = 1 MHz

R - Reverse Voltage (V)

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