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LS4151 Datasheet(PDF) 1 Page - Vishay Siliconix |
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LS4151 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() LS4151 www.vishay.com Vishay Semiconductors Rev. 1.9, 25-Feb-2020 1 Document Number: 85563 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Fast Switching Diode ADDITIONAL RESOURCES MECHANICAL DATA Case: QuadroMELF (SOD-80) Weight: approx. 34 mg Cathode band color: black Packaging codes / options: GS18/10K per 13 " reel (8 mm tape), 10K/box GS08/2.5K per 7 " reel (8 mm tape), 12.5K/box FEATURES • Silicon epitaxial planar diode • Electrical data identical with the device 1N4151 • QuadroMELF package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Extreme fast switches 333 DDD3 D 3D Models PARTS TABLE PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS LS4151 LS4151-GS18 or LS4151GS08 - Single Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage VRRM 75 V Reverse voltage VR 50 V Peak forward surge current tp = 1 μs IFSM 2A Repetitive peak forward current IFRM 500 mA Forward continuous current IF 300 mA Average forward current VR = 0 IF(AV) 150 mA Power dissipation Ptot 500 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air On PC board 50 mm x 50 mm x 1.6 mm RthJA 500 K/W Junction temperature Tj 175 °C Storage temperature range Tstg -65 to +175 °C |
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