PUMH13 datasheet(4/8 Pages) PHILIPS

4 / 8 page

2004 Apr 14

Philips Semiconductors

Product speciﬁcation

NPN/NPN resistor-equipped transistors;

R1 = 4.7 k

Ω, R2 = 47 kΩ

PEMH13; PUMH13

THERMAL CHARACTERISTICS

Notes

1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.

2. Reflow soldering is the only recommended soldering method.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Per transistor

Rth(j-a)

thermal resistance from junction to ambient

Tamb ≤ 25 °C

SOT363

note 1

625

K/W

SOT666

notes 1 and 2

625

K/W

Per device

Rth(j-a)

thermal resistance from junction to ambient

Tamb ≤ 25 °C

SOT363

note 1

416

K/W

SOT666

notes 1 and 2

416

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor

ICBO

collector-base cut-off current

VCB =50V; IE =0A

−−

100

ICEO

collector-emitter cut-off current

VCE =30V; IB =0A

−−

µA

VCE =30V; IB = 0 A; Tj = 150 °C

−−

µA

IEBO

emitter-base cut-off current

VEB =5V; IC =0A

−−

170

µA

hFE

DC current gain

VCE =5V; IC = 10 mA

100

−−

VCEsat

collector-emitter saturation voltage

IC = 5 mA; IB = 0.25 mA

−−

100

Vi(off)

input-off voltage

VCE =5V; IC = 100 µA

−

0.6

0.5

Vi(on)

input-on voltage

VCE = 0.3 V; IC = 5 mA

1.3

0.9

−

input resistor

3.3

4.7

6.1

Ω

resistor ratio

collector capacitance

VCB =10V; IE =ie =0A;

f = 1 MHz

−−

2.5

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