 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
BAS170WS Datasheet(PDF) 1 Page - Vishay Siliconix |
|
|
|||||||||||||||||||||||||||||
BAS170WS Datasheet(HTML) 1 Page - Vishay Siliconix |
|
|
1 / 3 page  BAS170WS www.vishay.com Vishay Semiconductors Rev. 2.2, 01-Jun-17 1 Document Number: 85653 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Schottky Diode DESIGN SUPPORT TOOLS click logo to get started MECHANICAL DATA Case: SOD-323 Weight: approx. 4.3 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box FEATURES • Schottky diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • AEC-Q101 qualified available • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note (1) Valid provided that electrodes are kept at ambient temperature Note (1) Valid provided that electrodes are kept at ambient temperature Note (1) Pulse test; tp ≤ 300 μs Available Models PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAS170WS BAS170WS-E3-08 or BAS170WS-E3-18 Single 73 Tape and reel BAS170WS-HE3-08 or BAS170WS-HE3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage VRRM 70 V Forward continuous current IF 70 mA Surge forward current tp < 1 s IFSM 600 mA Power dissipation (1) Ptot 200 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air (1) RthJA 650 K/W Junction temperature Tj 125 °C Operating temperature range Top -55 to +125 °C Storage temperature range Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage IR = 10 μA (pulsed) V(BR) 70 V Leakage current VR = 50 V IR 0.1 μA VR = 70 V IR 10 μA Forward voltage IF = 1 mA VF 375 410 mV IF = 10 mA VF 705 750 mV Forward voltage (1) IF = 15 mA VF 880 1000 mV Diode capacitance VR = 0 V, f = 1 MHz CD 1.5 2 pF Differential forward resistance IF = 5 mA, f = 10 kHz rf 34 Ω |
Similar Part No. - BAS170WS |
|
Similar Description - BAS170WS |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
