BAV19W datasheet(2/5 Pages) VISHAY

2 / 5 page

BAV19W, BAV20W, BAV21W

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Vishay Semiconductors

Rev. 1.6, 23-Feb-18

Document Number: 85725

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Note

(1) Valid provided that leads are kept at ambient temperature

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Forward Current vs. Forward Voltage

Fig. 2 - Admissible Forward Current vs. Ambient Temperature

THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Thermal resistance junction to ambient air (1)

RthJA

375

°C/W

Junction temperature (1)

150

°C

Storage temperature range (1)

Tstg

-65 to +150

°C

Operating temperature range

Top

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 100 mA

IF = 200 mA

1.25

Leakage current

VR = 100 V

BAV19W

100

VR = 100 V, Tj = 100 °C

BAV19W

μA

VR = 150 V

BAV20W

100

VR = 150 V, Tj = 100 °C

BAV20W

μA

VR = 200 V

BAV21W

100

VR = 200 V, Tj = 100 °C

BAV21W

μA

Dynamic forward

resistance

IF = 10 mA



Diode capacitance

VR = 0, f = 1 MHz

1.5

Reverse recovery time

IF = 30 mA, IR = 30 mA,

iR = 3 mA, RL = 100 

trr

18858

1000

100

0.1

0.01

0.4

0.6

0.8

0.2

VF - Forward Voltage (V)

Tj = 100 °C

25 °C

0.1

0.2

0.3

120

150

18859

Tamb - Ambient Temperature (°C)

Current (rectif.) O

DC current IF

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