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BAV301 Datasheet(PDF) 3 Page - Vishay Siliconix |
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BAV301 Datasheet(HTML) 3 Page - Vishay Siliconix |
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3 / 5 page ![]() BAV300, BAV301, BAV302, BAV303 www.vishay.com Vishay Semiconductors Rev. 2.3, 26-Nov-2021 3 Document Number: 85545 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Reverse Current vs. Junction Temperature Fig. 2 - Forward Current vs. Forward Voltage Fig. 3 - Differential Forward Resistance vs. Forward Current Fig. 4 - Board for RthJA Definition (in mm) 0 40 80 120 160 0.01 0.1 1 10 1000 Tj - Junction Temperature (°C) 200 94 9084 100 Scattering Limit V R = VRRM 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 VF - Forward Voltage (V) 2.0 94 9085 Scattering Limit T j = 25 °C 0.1 1 10 1 10 100 1000 IF - Forward Current (mA) 100 94 9089 T j = 25 °C 2.5 0.71 1.3 1.27 24 0.152 0.355 95 10329 |
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