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BAW76 Datasheet(PDF) 1 Page - Vishay Siliconix |
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BAW76 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 3 page ![]() BAW76 www.vishay.com Vishay Semiconductors Rev. 1.9, 25-Feb-2020 1 Document Number: 85551 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Fast Switching Diode ADDITIONAL RESOURCES MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band color: black Packaging codes / options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box FEATURES • Silicon epitaxial planar diode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Extreme fast switches 333 DDD3 D 3D Models PARTS TABLE PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS BAW76 BAW76-TR or BAW76-TAP BAW76 Single Tape and reel / ammopack ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage VRRM 75 V Reverse voltage VR 50 V Peak forward surge current tp = 1 μs IFSM 2A Repetitive peak forward current IFRM 450 mA Forward continuous current IF 300 mA Average forward current VR = 0 IF(AV) 150 mA Power dissipation l = 4 mm, TL = 45 °C Ptot 440 mW l = 4 mm, TL ≤ 25 °C Ptot 500 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air l = 4 mm, TL = constant RthJA 350 K/W Junction temperature Tj 175 °C Storage temperature range Tstg -65 to +175 °C |
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