TDF8599BTH datasheet(30/54 Pages) NXP

30 / 54 page

NXP Semiconductors

TDF8599B

I2C-bus controlled dual channel 43 W/2 Ohm, single channel 85 W/1 Ohm class-D power amplifier with

load diagnostics

TDF8599B

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 2 — 23 August 2016

30 / 54

12.1 Switching characteristics

Table 20. Switching characteristics

VP = VDDA = 14.4 V; −40 °C < Tamb < +85 °C; unless otherwise specified.

Symbol Parameter

Conditions

Min Typ

Max Unit

Internal oscillator

external clock frequency;

Rosc = 39 kΩ

320

kHz

fosc

oscillator frequency

internal fixed frequency and spread

spectrum mode frequency based on

the resistor value connected to pin

OSCSET for the master setting

300

450

kHz

Master/slave setting (OSCIO pin)

Rosc

oscillator resistance

resistor value on pin OSCSET;

master setting

kΩ

VOL

LOW-level output voltage

output

0.8

VOH

HIGH-level output voltage

output

VIL

LOW-level input voltage

input

0.8

VIH

HIGH-level input voltage

input

ftrack

tracking frequency

PLL enabled

300

500

kHz

Nslave

number of slaves

driven by one master

Spread spectrum mode setting

Δfosc

oscillator frequency variation

between maximum and minimum

values; Spread spectrum mode

activated

fsw

switching frequency

Spread spectrum mode activated;

CSSM = 1 μF

Frequency hopping

change positive; IB1[D4] = 1;

IB1[D3] = 1

fosc + 10 % -

kHz

fosc(int)

internal oscillator frequency

change negative; IB1[D4] = 1;

IB1[D3] = 0

fosc - 10 % -

kHz

Timing

rise time

PWM output; Io = 0 A

fall time

PWM output; Io = 0 A

tw(min)

minimum pulse width

Io = 0 A

TDF8599BTH Datasheet(PDF) 30 Page - NXP Semiconductors

TDF8599BTH Datasheet(HTML) 30 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54

Datasheet Download

Link URL