QPD1014

15W, 50V, 30

– 1200 MHz, GaN RF Input-Matched Transistor

Rev. A

- 2 of 21 -

Disclaimer: Subject to change without notice

© 2016 Qorvo

www.qorvo.com

Parameter

Rating

Units

+145

V

-8 to +2

V

1

A

See page 4.

mA

15.8

W

RF Input Power, CW, 50 Ω, T = 25 °C

+31

dBm

275

°C

Mounting Temperature (30 Seconds)

°C

Storage Temperature

−40 to +150

°C

Notes:

1. Operation of this device outside the parameter ranges given above may cause permanent damage.

Parameter

Min

Typ

Max

Units

Operating Temp. Range

−40

+25

+85

 °C

+12

+50

+55

V

–

25

–

mA

–

500

–

mA

–

−2.8

–

V

–

–

250

°C

–

–

14.4

W

Notes:

1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed

over all recommended operating conditions.

3. Back plane of package at 85°C.