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GI856 Datasheet(PDF) 1 Page - Vishay Siliconix |
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GI856 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() GI850, GI851, GI852, GI854, GI856, GI858 www.vishay.com Vishay General Semiconductor Not Available for New Designs, Use RGP30A, RGP30B, RGP30D, RGP30G Revision: 27-Feb-14 1 Document Number: 88630 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in fast switching rectification of power supply, inverters, converters and freewheeling diodes for consumer and telecommunication. Note • These devices are not AEC-Q101 qualified. MECHANICAL DATA Case: DO-201AD, molded epoxy body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V IFSM 100 A trr 200 ns IR 10 μA VF 1.25 V TJ max. 150 °C Package DO-201AD Diode variation Single die DO-201AD MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GI850 GI851 GI852 GI854 GI856 GI858 UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 V Maximum RMS voltage VRMS 35 70 140 280 420 560 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 V Maximum non-repetitive peak reverse voltage VRSM 75 150 250 450 650 880 V Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 90 °C IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A Operating junction and storage temperature range TJ, TSTG -50 to +150 °C |
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