ACE11306A datasheet(1/3 Pages) ACE

Part #	ACE11306A

Description	N-Channel Enhancement Mode MOSFET

PDF	3 Pages

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Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE11306A

N-Channel Enhancement Mode MOSFET

VER 1.1

1

Description

The ACE11306A is the N-Channel enhancement mode power field effect transistors are produced

using high cell density, DMOS trench technology.

This high-density process is especially tailored to minimize on-state resistance and provide superior

switching performance. These devices are particularly suited for low voltage application such as notebook

computer power management and other batter powered circuits where high-side switching, low in-line

power loss and resistance to transients are needed.

Features

⚫

30V/0.95A, RDS(ON)=550mΩ@VGS=4.5V

⚫

30V/0.75A, RDS(ON)=650mΩ@VGS=2.5V

⚫

30V/0.65A, RDS(ON)=850mΩ@VGS=1.8V

⚫

Super high-density cell design for extremely low RDS(ON)

⚫

Exceptional on-resistance and maximum DC current capability

Application

⚫

Power Management in Note book

⚫

Portable Equipment

⚫

Battery Powered System

⚫

DC/DC Converter

⚫

Load Switch

⚫

DSC

⚫

LCD Display inverter

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±12

V

Continuous Drain Current (TJ=150℃)

TA=25℃

ID

0.65

A

Pulsed Drain Current

IDM

2.8

A

Continuous Source Current (Diode Conduction)

IS

0.3

A

Power Dissipation

TA=25℃

PD

0.15

W

Operating Junction Temperature

TJ

-55/150

O

C

Storage Temperature Range

TSTG

-55/150

O

C

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ACE11306A Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

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