ACE11545B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.1

1

General Description

⚫

load switch

⚫

other general applications

Features

⚫

⚫

⚫

Parameter

Symbol

Max

Unit

Drain-Source Voltage

-20

V

Gate-Source Voltage

±10

V

Drain Current (Continuous)*AC

-7.0

A

-5.8

Drain Current (Pulsed)*B

-30

A

Power Dissipation

1.25

W

Operating temperature / Storage temperature

-55~150

℃

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

Thermal Resistance Ratings

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient

t ≤ 10 s

75

100

℃/W

Maximum Junction-to-Foot (Drain)

Steady State

43

52

Ordering information

ACE11545B XX + H

BM: SOT-23-3

Pb - free

Halogen - free