ACE11560LA datasheet(1/3 Pages) ACE

Part #	ACE11560LA

Description	60V N-Channel Power MOSFET

PDF	3 Pages

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Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE11560LA

60V N-Channel Power MOSFET

VER 1.1

1

Description

The ACE11560LA uses advanced trench technology to provide excellent RDS(ON), low gate charge. It

can be used in a wide variety of applications.

Features

⚫

VDS = 60V, ID = 50A

⚫

RDS(ON) < 15mΩ @ VGS=10V

⚫

RDS(ON) < 18mΩ @ VGS=4.5V

⚫

High density cell design for lower RDS(ON)

⚫

Fully characterized avalanche voltage and current

⚫

Good stability and uniformity with high EAS

⚫

Excellent package for good heat dissipation

Applications

⚫

Power switching application

⚫

Hard switched and High frequency circuits

⚫

Uninterruptible power supply

Absolute Maximum Ratings (T

A=25℃ Unless otherwise noted)

Parameter

Symbol

Typical

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

50

A

Drain Current-Pulsed

(Note 1)

IDM

200

A

Maximum Power Dissipation(Tc=25℃)

PD

87

W

Single pulse avalanche energy

(Note 2)

EAS

120

mJ

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 175

O

C

Notes:

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

EAS condition :T j=25℃,VDD=30V,VGS=10V,L=0.5mH,Rg

Thermal Characteristic

Parameter

Symbol

Typical

Unit

Thermal Resistance, Junction-to-Case

RθJC

1.72

O

C /W

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ACE11560LA Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

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