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BAY80 Datasheet(PDF) 1 Page - Vishay Siliconix |
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BAY80 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page  BAY80 www.vishay.com Vishay Semiconductors Rev. 1.9, 06-May-13 1 Document Number: 85553 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Switching Diode, High Voltage MECHANICAL DATA Case: DO-35 Weight: approx. 125 mg Cathode band color: black Packaging codes/options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box FEATURES • Silicon epitaxial planar diode • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General purpose PARTS TABLE PART ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS BAY80 BAY80-TR or BAY80-TAP BAY80 Single diode Tape and reel/ammopack ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage VRRM 150 V Reverse voltage VR 120 V Peak forward surge current tp = 1 μs IFSM 1A Repetitive peak forward current IFRM 625 mA Forward continuous current IF 250 mA Average forward current IF(AV) 200 mA THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air l = 4 mm, TL = constant RthJA 350 K/W Junction to ambient air Tj 175 °C Storage temperature range Tstg - 65 to + 175 °C |
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