VT6045C, VIT6045C

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Vishay General Semiconductor

Revision: 09-Nov-17

1

Document Number: 89352

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: for definitions of compliance

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

MECHANICAL DATA

Case: TO-220AB and TO-262AA



Molding compound meets UL 94 V-0 flammability rating

Base

P/N-M3

-

halogen-free,

RoHS-compliant,

and

commercial grade

Terminals:

matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



M3 suffix meets JESD 201 class 1A whisker test

Polarity: as marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

2 x 30 A

45 V

320 A

0.47 V

150 °C

Package

TO-220AB, TO-262AA

Diode variations

Common cathode

TO-220AB

1

2

3

TMBS

®

1

K

2

3

TO-262AA

PIN 1

PIN 2

PIN 3

K

VIT6045C

VT6045C

PIN 1

PIN 2

CASE

PIN 3

PARAMETER

SYMBOL

VT6045C

VIT6045C

UNIT

Maximum repetitive peak reverse voltage

45

V

Maximum average forward rectified current (fig. 1)

per device

60

A

per diode

30

Peak forward surge current 8.3 ms single half sine-wave



superimposed on rated load per diode

320

A

Operating junction and storage temperature range

-40 to +150

°C