ACE12008A datasheet(1/3 Pages) ACE

Part #	ACE12008A

Description	N&P Pair Enhancement Mode MOSFET

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE12008A

N&P Pair Enhancement Mode MOSFET

VER 1.1

1

Description

The ACE12008A is the N&P Channel enhancement mode power field effect transistors are produced

using high cell density, DMOS trench technology. This high-density process is especially tailored to

minimize on-state resistance and provide superior switching performance. These devices are particularly

suited for low voltage applications such as notebook computer power management and other battery

powered circuits where high-side switching, low in-line power loss, and resistance to transients are

needed.

Features

⚫

N-Channel

20V/0.65A, RDS(ON)=380mΩ@VGS=4.5V

20V/0.55A, RDS(ON)=450mΩ@VGS=2.5V

20V/0.45A, RDS(ON)=800mΩ@VGS=1.8V

⚫

P-Channel

-20V/0.45A, RDS(ON)= 520mΩ @VGS=-4.5V

-20V/0.35A, RDS(ON)= 700mΩ @VGS=-2.5V

-20V/0.25A, RDS(ON)= 1500mΩ @VGS=-1.8V

⚫

Super high-density cell design for extremely low RDS (ON)

⚫

Exceptional on-resistance and maximum DC current capability

Application

⚫

Power Management in Note book

⚫

Portable Equipment

⚫

Battery Powered System

⚫

DC/DC Converter

⚫

Load Switch

⚫

DSC

⚫

LCD Display inverter

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ACE12008A Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

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