ACE13038A

Dual N-Channel Enhancement Mode MOSFET

VER 1.1

1

Description

The ACE13038A is the Dual N-Channel enhancement mode power field effect transistors are

produced using high cell density, DMOS trench technology. This high-density process is especially

tailored to minimize on-state resistance and provide superior switching performance. These devices are

particularly suited for low voltage applications such as notebook computer power management and other

battery powered circuits where high-side switching, low in-line power loss, and resistance to transients

are needed.

Features

⚫

N-Channel

⚫

⚫

Exceptional on-resistance and maximum DC current capability

Application

⚫

Power Management in Note book

⚫

Portable Equipment

⚫

Battery Powered System

⚫

DC/DC Converter

⚫

Load Switch

⚫

DSC

⚫

LCD Display inverter

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

±12

V

1.2

A

0.9

Pulsed Drain Current

4

A

Continuous Source Current (Diode Conduction)

0.6

A

Power Dissipation

0.35

W

0.19

Operating Junction Temperature

-55/150

O

C

Storage Temperature Range

-55/150

O

C