ACE13043A

N-Channel Enhancement Mode MOSFET

VER 1.1

1

Description

The ACE13043A is the N-Channel logic enhancement mode power field effect transistors are

produced using high cell density, DMOS trench technology.

This high-density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook

computer power management and other batter powered circuits, and low in-line power loss are needed in

a very small outline surface mount package.

Features

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Exceptional on-resistance and maximum DC current capability

Application

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Power Management in Note book

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Portable Equipment

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Battery Powered System

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DC/DC Converter

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Load Switch

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DSC

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LCD Display inverter

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

2.8

A

2.3

Pulsed Drain Current

10

A

Continuous Source Current (Diode Conduction)

1.25

A

Power Dissipation

0.33

W

0.21

Operating Junction Temperature

150

O

C

Storage Temperature Range

-55/150

O

C

Thermal Resistance-Junction to Ambient

100

O

C/W